类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 晶体管元件材料 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 资历状况 | 配置 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 无卤素 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大双电源电压 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大耗散功率(Abs) | 恢复时间 | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 反馈上限-最大值 (Crss) | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||
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FS50KM-2-AX#204 | Renesas Electronics America Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Bulk | Renesas Electronics America Inc | 活跃 | * | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STL105DN4LF7AG | STMicroelectronics | 数据表 | 42000 In Stock | - | 最小起订量: 1 最小包装量: 1 | ACTIVE (Last Updated: 8 months ago) | 表面贴装 | 8-PowerVDFN | 40A Tc | -55°C~175°C TJ | Tape & Reel (TR) | Automotive, AEC-Q101, STripFET™ F7 | 活跃 | 未说明 | compliant | 未说明 | 94W | 2 N-Channel (Dual) | 4.5m Ω @ 12A, 10V | 2.5V @ 250μA | 1594pF @ 25V | 27.5nC @ 10V | 40V | Standard | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ZDM4306NTA | Diodes Incorporated | 数据表 | 1637 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 表面贴装 | SOT-223-8 | 2 | 30 ns | Tape & Reel (TR) | 1997 | e3 | Obsolete | 1 (Unlimited) | 10 | EAR99 | 哑光锡 | 150°C | -55°C | 60V | 3W | DUAL | 鸥翼 | 260 | unknown | 1.3A | 10 | R-PDSO-G10 | 不合格 | 2 | 增强型MOSFET | 3W | 8 ns | SWITCHING | 25ns | 60V | N-CHANNEL | 16 ns | 2A | 20V | 2A | 60V | 350pF | METAL-OXIDE SEMICONDUCTOR | 450mOhm | 330 mΩ | 30 pF | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7756 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | -55°C~150°C TJ | Tube | 2004 | HEXFET® | Obsolete | 1 (Unlimited) | EAR99 | -12V | 1W | -4.3A | 增强型MOSFET | 2 P-Channel (Dual) | 40m Ω @ 4.3A, 4.5V | 900mV @ 250μA | 1400pF @ 10V | 18nC @ 4.5V | 12V | 4.3A | -12V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
US6K1TR | ROHM Semiconductor | 数据表 | 21961 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 6-SMD, Flat Leads | 6 | SILICON | 2 | 15 ns | 150°C TJ | Tape & Reel (TR) | 2006 | e2 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 340MOhm | Tin/Copper (Sn/Cu) | 30V | 1W | 260 | 1.5A | 10 | *K1 | 6 | Dual | 增强型MOSFET | 1W | 7 ns | 2 N-Channel (Dual) | SWITCHING | 240m Ω @ 1.5A, 4.5V | 1.5V @ 1mA | 80pF @ 10V | 2.2nC @ 4.5V | 9ns | 6 ns | 1.5A | 1.5V | 12V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
![]() | SMA5131 | Sanken | 数据表 | 76 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 通孔 | 通孔 | 12-SIP | SILICON | 6 | Tube | 2010 | yes | 活跃 | 1 (Unlimited) | 12 | EAR99 | SINGLE | 未说明 | unknown | 未说明 | 12 | R-PSIP-T12 | 不合格 | COMPLEX | 增强型MOSFET | 3 N and 3 P-Channel (3-Phase Bridge) | 250V | N-CHANNEL | 2A | 2A | 1.8Ohm | 250V | METAL-OXIDE SEMICONDUCTOR | Standard | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMT6018LDR-13 | Diodes Incorporated | 数据表 | 29980 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 20 Weeks | 表面贴装 | 8-PowerVDFN | 8.8A Ta | -55°C~150°C TJ | Tape & Reel (TR) | e4 | 活跃 | 1 (Unlimited) | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 未说明 | 未说明 | 1.9W | 2 N-Channel (Dual) | 17m Ω @ 8.2A, 10V | 3V @ 250μA | 869pF @ 30V | 13.9nC @ 10V | 60V | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AO8801 | Alpha & Omega Semiconductor Inc. | 数据表 | 710 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 4.7A | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | Obsolete | 1 (Unlimited) | 1.4W | 2 P-Channel (Dual) | 42m Ω @ 4.7A, 4.5V | 1V @ 250μA | 1450pF @ 10V | 17.2nC @ 4.5V | 20V | Standard | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMHT6016LFJ-13 | Diodes Incorporated | 数据表 | 1 In Stock | - | 最小起订量: 1 最小包装量: 1 | 24 Weeks | 表面贴装 | 12-VDFN Exposed Pad | 14.8A Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101 | e3 | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 260 | 30 | 4 N-Channel | 22m Ω @ 10A, 10V | 3V @ 250μA | 864pF @ 30V | 8.4nC @ 4.5V | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HUF7554S3S | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Bulk | Harris Corporation | 活跃 | * | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | STC5NF30V | STMicroelectronics | 数据表 | 2587 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | SILICON | 2 | 27 ns | -55°C~150°C TJ | Tape & Reel (TR) | STripFET™ II | e4 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 30V | 1.5W | 鸥翼 | 260 | 5A | 未说明 | STC5NF | 8 | 不合格 | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 1.5W | 2 N-Channel (Dual) | SWITCHING | 31m Ω @ 2.5A, 4.5V | 600mV @ 250μA | 460pF @ 15V | 11.5nC @ 4.5V | 33ns | 33 ns | 5A | 12V | 5A | 0.035Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||
IRF9640S2497 | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Bulk | Harris Corporation | 活跃 | * | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 2N7002DWH6327XTSA1 | Infineon Technologies | 数据表 | 546 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 6-VSSOP, SC-88, SOT-363 | 6 | SILICON | 300mA | 2 | 5.5 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | OptiMOS™ | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 500mW | 鸥翼 | 未说明 | 未说明 | 6 | 不合格 | 增强型MOSFET | 500mW | 3 ns | 2 N-Channel (Dual) | SWITCHING | 3 Ω @ 500mA, 10V | 2.5V @ 250μA | 无卤素 | 20pF @ 25V | 0.6nC @ 10V | 3.3ns | 3.1 ns | 115mA | 20V | 60V | 0.3A | 3Ohm | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 3 pF | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||
![]() | PMGD175XN,115 | NXP USA Inc. | 数据表 | 120000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | SILICON | 900mA | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | Obsolete | 1 (Unlimited) | 6 | Tin (Sn) | 鸥翼 | 6 | IEC-60134 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 390mW | 2 N-Channel (Dual) | SWITCHING | 225m Ω @ 1A, 4.5V | 1.5V @ 250μA | 75pF @ 15V | 1.1nC @ 4.5V | 30V | 0.9A | 0.225Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 0.905W | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
QH8M22TCR | ROHM Semiconductor | 数据表 | 2950 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 8-SMD, Flat Lead | YES | SILICON | 4.5A Ta 2A Ta | 2 | 150°C TJ | Cut Tape (CT) | 活跃 | 1 (Unlimited) | 8 | EAR99 | DUAL | 未说明 | not_compliant | 未说明 | R-PDSO-F8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 1.1W Ta | N and P-Channel | SWITCHING | 46m Ω @ 4.5A, 10V, 190m Ω @ 2A, 10V | 2.5V @ 10μA, 3V @ 1mA | 193pF 450pF @ 20V | 2.6nC, 9.5nC @ 10V | 40V | N-CHANNEL AND P-CHANNEL | 4.5A | 0.059Ohm | 18A | 40V | 1.6 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMTH6016LSDQ-13 | Diodes Incorporated | 数据表 | 24000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 23 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 7.6A Ta | -55°C~175°C TJ | Tape & Reel (TR) | e3 | yes | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 未说明 | 未说明 | 1.4W 1.9W | 2 N-Channel (Dual) | 19.5m Ω @ 10A, 10V | 2.5V @ 250μA | 864pF @ 30V | 17nC @ 10V | 60V | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ZXMP6A16DN8QTA | Diodes Incorporated | 数据表 | 1082 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 2 | 35 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2002 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 1.81W | 鸥翼 | 260 | 30 | AEC-Q101 | 2 | Dual | 增强型MOSFET | 3.5 ns | 2 P-Channel (Dual) | SWITCHING | 85m Ω @ 2.9A, 10V | 1V @ 250μA (Min) | 1021pF @ 30V | 24.2nC @ 10V | 4.1ns | 60V | 10 ns | 2.9A | 20V | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||
![]() | 2N7002DWA-7 | Diodes Incorporated | 数据表 | 1033 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 6.010099mg | 2 | 12 ns | -55°C~150°C TJ | Cut Tape (CT) | 2013 | e3 | Obsolete | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 300mW | 260 | 30 | 300mW | 3.3 ns | 2 N-Channel (Dual) | 6 Ω @ 115mA, 10V | 2.5V @ 250μA | 22pF @ 25V | 0.87nC @ 10V | 3.2ns | 60V | 6.3 ns | 180mA | 20V | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PMDXB600UNELZ | Nexperia USA Inc. | 数据表 | 110000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 4 Weeks | 表面贴装 | 表面贴装 | 6-XFDFN Exposed Pad | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | 活跃 | 1 (Unlimited) | 6 | 380mW | 无铅 | 6 | IEC-60134 | R-PDSO-N6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 380mW | 2 N-Channel (Dual) | SWITCHING | 620m Ω @ 600mA, 4.5V | 950mV @ 250μA | 21.3pF @ 10V | 0.7nC @ 4.5V | 20V | 600mA | 0.6A | 0.62Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMHC4035LSDQ-13 | Diodes Incorporated | 数据表 | 66400 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 23 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 4.5A Ta 3.7A Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | Automotive, AEC-Q101 | e3 | 活跃 | EAR99 | Matte Tin (Sn) | 未说明 | 未说明 | 1.5W Ta | 2 N and 2 P-Channel (H-Bridge) | 45m Ω @ 3.9A, 10V, 65m Ω @ 4.2A, 10V | 3V @ 250μA | 574pF @ 20V 587pF @ 20V | 5.9nC @ 4.5V, 5.4nC @ 4.5V | 40V | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
QS8J5TR | ROHM Semiconductor | 数据表 | 2500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 8-SMD, Flat Lead | 8 | SILICON | 2 | 90 ns | 150°C TJ | Tape & Reel (TR) | 2014 | e2 | yes | 不用于新设计 | 1 (Unlimited) | 8 | EAR99 | Tin/Copper (Sn/Cu) | 600mW | 260 | 10 | 8 | 2 | 增强型MOSFET | 9 ns | 2 P-Channel (Dual) | SWITCHING | 39m Ω @ 5A, 10V | 2.5V @ 1mA | 1100pF @ 10V | 19nC @ 10V | 40ns | 30V | 55 ns | 5A | 20V | 5A | 0.039Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDM3300NZ | ON Semiconductor | 数据表 | 86754 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-PowerVDFN | 8-MLP (3x3) | 10A | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | Obsolete | 1 (Unlimited) | 900mW | 2 N-Channel (Dual) | 23mOhm @ 10A, 4.5V | 1.5V @ 250μA | 1610pF @ 10V | 17nC @ 4.5V | 20V | 逻辑电平门 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PMGD290XN,115 | Nexperia USA Inc. | 数据表 | 1000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 4 Weeks | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | 6 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 8541.29.00.75 | 鸥翼 | 260 | 30 | 6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 410mW | 410mW | 2 N-Channel (Dual) | SWITCHING | 350m Ω @ 200mA, 4.5V | 1.5V @ 250μA | 34pF @ 20V | 0.72nC @ 4.5V | 20V | 860mA | 0.35Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRFHM792TR2PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | 8-PQFN (3.3x3.3), Power33 | 2.3A | 5.2 ns | Cut Tape (CT) | 2011 | HEXFET® | Obsolete | 1 (Unlimited) | 150°C | -55°C | 2.3W | IRFHM792PBF | Dual | 2.3W | 2.3W | 2 N-Channel (Dual) | 195mOhm @ 2.9A, 10V | 4V @ 10μA | 251pF @ 25V | 6.3nC @ 10V | 4.7ns | 100V | 2.6 ns | 2.3A | 3V | 20V | 100V | 251pF | 23 ns | Standard | 195mOhm | 195 mΩ | 3 V | 无SVHC | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMC6070LND-7 | Diodes Incorporated | 数据表 | 360000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | 3.1A 2.4A | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | e3 | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 1.4W | 未说明 | 未说明 | N and P-Channel | 85m Ω @ 1.5A, 10V | 3V @ 250μA | 731pF @ 20V | 11.5nC @ 10V | 60V | 2.4A | Standard | ROHS3 Compliant |
FS50KM-2-AX#204
Renesas Electronics America Inc
分类:Transistors - FETs, MOSFETs - Arrays
STL105DN4LF7AG
STMicroelectronics
分类:Transistors - FETs, MOSFETs - Arrays
ZDM4306NTA
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
0.004500
IRF7756
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
US6K1TR
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
1.364408
SMA5131
Sanken
分类:Transistors - FETs, MOSFETs - Arrays
24.245740
DMT6018LDR-13
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
6.975072
AO8801
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
DMHT6016LFJ-13
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
HUF7554S3S
Harris Corporation
分类:Transistors - FETs, MOSFETs - Arrays
STC5NF30V
STMicroelectronics
分类:Transistors - FETs, MOSFETs - Arrays
IRF9640S2497
Harris Corporation
分类:Transistors - FETs, MOSFETs - Arrays
2N7002DWH6327XTSA1
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
PMGD175XN,115
NXP USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
QH8M22TCR
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
DMTH6016LSDQ-13
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
ZXMP6A16DN8QTA
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
12.761036
2N7002DWA-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
PMDXB600UNELZ
Nexperia USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
3.342257
DMHC4035LSDQ-13
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
10.974042
QS8J5TR
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
FDM3300NZ
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
26.747783
PMGD290XN,115
Nexperia USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
1.336615
IRFHM792TR2PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
DMC6070LND-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
7.588574
